onsemi NVTFS010N10MCL Type N-Channel MOSFET, 57.8 A, 100 V Enhancement, 8-Pin WDFN
- RS Stock No.:
- 195-2553
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1500 units)*
$1,584.00
(exc. GST)
$1,743.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Supply shortage
- Plus 4,500 left, shipping from 05 January 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | $1.056 | $1,584.00 |
| 3000 - 4500 | $1.03 | $1,545.00 |
| 6000 + | $1.014 | $1,521.00 |
*price indicative
- RS Stock No.:
- 195-2553
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NVTFS010N10MCL | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 77.8W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.15 mm | |
| Height | 0.75mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NVTFS010N10MCL | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 77.8W | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 3.15 mm | ||
Height 0.75mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3x3 mm)
Compact Design
Low On-Resistance
Minimizes Conduction Losses
Low Capacitance
Minimize Driver Losses
PPAP Capable
Suitable for Automotive Applications
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Related links
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