N-Channel MOSFET, 4 A, 3-Pin DPAK STMicroelectronics STD5N80K5
- RS Stock No.:
- 188-8289
- Mfr. Part No.:
- STD5N80K5
- Brand:
- STMicroelectronics
4700 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 2500)
$1.405
(exc. GST)
$1.545
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | $1.405 | $3,512.50 |
| 5000 - 7500 | $1.388 | $3,470.00 |
| 10000 + | $1.349 | $3,372.50 |
*price indicative
- RS Stock No.:
- 188-8289
- Mfr. Part No.:
- STD5N80K5
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.73 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 60 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Width | 6.2mm |
| Number of Elements per Chip | 1 |
| Length | 6.6mm |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 2.17mm |
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