onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

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Subtotal (1 pack of 4 units)*

$12.312

(exc. GST)

$13.544

(inc. GST)

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4 - 748$3.078$12.31
752 - 1496$2.998$11.99
1500 +$2.955$11.82

*price indicative

Packaging Options:
RS Stock No.:
185-9246
Mfr. Part No.:
NVMYS1D3N04CTWG
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

252A

Maximum Drain Source Voltage Vds

40V

Series

NVMYS1D3N04C

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

75nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

134W

Maximum Operating Temperature

175°C

Width

4.25 mm

Length

5mm

Height

1.2mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non Compliant

COO (Country of Origin):
PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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