P-Channel MOSFET, 50 A, 40 V, 8-Pin PQFN8 onsemi FDWS9510L-F085
- RS Stock No.:
- 178-4611
- Mfr. Part No.:
- FDWS9510L-F085
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
$19.11
(exc. GST)
$21.02
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | $1.911 | $19.11 |
| 750 - 1490 | $1.863 | $18.63 |
| 1500 + | $1.833 | $18.33 |
*price indicative
- RS Stock No.:
- 178-4611
- Mfr. Part No.:
- FDWS9510L-F085
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±16 V | |
| Width | 5.9mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.25V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±16 V | ||
Width 5.9mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Length 5.1mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.25V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
- COO (Country of Origin):
- PH
PowerTrench® MOSFET, P-Channel Logic Level, -40V, -50A, 13.5mΩ
Typical RDS(on) = 11 mΩ at VGS = -10V, ID = -50 A
Typical Qg(tot) = 28 nC at VGS = -10V, ID = -50 A
UIS Capability
Wettable flanks for automatic optical inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
Typical Qg(tot) = 28 nC at VGS = -10V, ID = -50 A
UIS Capability
Wettable flanks for automatic optical inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.