N-Channel MOSFET, 147 A, 80 V, 8-Pin PQFN8 onsemi NTMFS08N003C
- RS Stock No.:
- 178-4505
- Mfr. Part No.:
- NTMFS08N003C
- Brand:
- onsemi
On back order for despatch 21/10/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 10)
$9.147
(exc. GST)
$10.062
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 740 | $9.147 | $91.47 |
| 750 - 1490 | $8.92 | $89.20 |
| 1500 + | $8.785 | $87.85 |
| *price indicative | ||
- RS Stock No.:
- 178-4505
- Mfr. Part No.:
- NTMFS08N003C
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A
Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drives
Solar Inverters
Load switches
End Products
Power adaptors
DC to DC power supplies
Power Tools
Drones
Battery packs
Shielded Gate MOSFET Technology
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A
Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drives
Solar Inverters
Load switches
End Products
Power adaptors
DC to DC power supplies
Power Tools
Drones
Battery packs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 147 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | PQFN8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 6mm |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |
| Forward Diode Voltage | 1.3V |