N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 Microchip TN2106N3-G
- RS Stock No.:
- 177-9692
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
On back order for despatch 29/05/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Bag of 1000)
$0.817
(exc. GST)
$0.899
(inc. GST)
| Units | Per unit | Per Bag* |
| 1000 - 4000 | $0.817 | $817.00 |
| 5000 + | $0.735 | $735.00 |
| *price indicative | ||
- RS Stock No.:
- 177-9692
- Mfr. Part No.:
- TN2106N3-G
- Brand:
- Microchip
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TW
Product Details
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Series | TN2106 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 740 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 4.06mm |
| Number of Elements per Chip | 1 |
| Length | 5.08mm |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.8V |