N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
- RS Stock No.:
- 171-3615
- Mfr. Part No.:
- TSM2308CX RFG
- Brand:
- Taiwan Semiconductor
12000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.487
(exc. GST)
$0.536
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | $0.487 | $1,461.00 |
| 6000 - 9000 | $0.475 | $1,425.00 |
| 12000 + | $0.468 | $1,404.00 |
| *price indicative | ||
- RS Stock No.:
- 171-3615
- Mfr. Part No.:
- TSM2308CX RFG
- Brand:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode. It is generally used DC-DC power system
and load switch applications.
and load switch applications.
Advance trench process technology
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 192 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 1.25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 3.99 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 1.05mm |