N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

Discontinued product

Technical data sheets

The Infineon IRF7807Z is the 30V single N-channel HEXFET power MOSFET in a SO-8 Package.

Industry leading quality
Low RDS(ON) at 4.5V VGS
Fully characterized avalanche voltage and current
Ultra low gate impedance

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	30 V
Series	IRF7807ZPbF
Package Type	SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.25V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	20 V
Width	4mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	7.2 nC @ 4.5 V
Length	5mm
Maximum Operating Temperature	+150 °C
Height	1.5mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C
Typical Power Gain	0