Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

$447.00

(exc. GST)

$492.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.149$447.00
6000 - 9000$0.145$435.00
12000 +$0.143$429.00

*price indicative

RS Stock No.:
170-4846
Mfr. Part No.:
PMV30UN2R
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.4A

Maximum Drain Source Voltage Vds

20V

Series

PMV30UN2

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3mm

Height

1mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability of 1000 mW

Target applications

LED driver

Power management

Low-side load switch

Switching circuits

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