- RS Stock No.:
- 170-2286
- Mfr. Part No.:
- IPB180N10S402ATMA1
- Brand:
- Infineon
Available for back order.
Added
Price (ex. GST) Each (On a Reel of 1000)
$5.723
(exc. GST)
$6.295
(inc. GST)
Units | Per unit | Per Reel* |
1000 - 1000 | $5.723 | $5,723.00 |
2000 + | $5.666 | $5,666.00 |
*price indicative |
- RS Stock No.:
- 170-2286
- Mfr. Part No.:
- IPB180N10S402ATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon IPB180N10S4-02 is the 100V, N-channel automotive MOSFET. The package type of the device is the D2PAK 7pin and 175°C operating temperature.
N-channel enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
AEC qualified
MSL1 up to 260°C peak reflow
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 180 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-263 |
Series | IPB180N10S4-02 |
Mounting Type | Surface Mount |
Pin Count | 7 + Tab |
Maximum Drain Source Resistance | 2.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Length | 10mm |
Width | 10.25mm |
Typical Gate Charge @ Vgs | 156 nC @ 10 V |
Height | 4.4mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |