N-Channel MOSFET, 17 A, 500 V, 3-Pin D2PAK STMicroelectronics STB23NM50N
- RS Stock No.:
- 168-7555
- Mfr. Part No.:
- STB23NM50N
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 1000 units)**
$4,207.00
(exc. GST)
$4,628.00
(inc. GST)
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
---|---|---|
1000 - 1000 | $4.207 | $4,207.00 |
2000 - 3000 | $4.102 | $4,102.00 |
4000 + | $4.039 | $4,039.00 |
**price indicative
- RS Stock No.:
- 168-7555
- Mfr. Part No.:
- STB23NM50N
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 500 V | |
Series | MDmesh | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 190 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Width | 10.4mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.75mm | |
Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Height | 4.6mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 500 V | ||
Series MDmesh | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.75mm | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 4.6mm | ||
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