onsemi NDS332 Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 166-1811
Mfr. Part No.:: NDS332P
Brand:: onsemi

onsemi NDS332 Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

$723.00

(exc. GST)

$795.00

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

6,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 12000	$0.241	$723.00
15000 +	$0.217	$651.00

*price indicative

RS Stock No.:: 166-1811
Mfr. Part No.:: NDS332P
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	20V
	Series	NDS332
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.7nC
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.94mm
	Length	2.92mm
	Width	1.4 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 20V
	Series NDS332
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.7nC
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.94mm
	Length 2.92mm
	Width 1.4 mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.