FDV304P P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 460 mA
Maximum Drain Source Voltage 25 V
Maximum Drain Source Resistance 1.1 Ω
Minimum Gate Threshold Voltage 0.65V
Maximum Gate Source Voltage +8 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 350 mW
Height 0.93mm
Typical Input Capacitance @ Vds 63 pF@ 10 V
Maximum Operating Temperature +150 °C
Number of Elements per Chip 1
Width 1.3mm
Typical Turn-On Delay Time 6 ns
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V
Length 2.92mm
Dimensions 2.92 x 1.3 x 0.93mm
Transistor Material Si
Typical Turn-Off Delay Time 55 ns
99000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.077
(exc. GST)
$ 0.085
(inc. GST)
units
Per unit
Per Reel*
3000 +
$0.077
$231.00
*price indicative
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