P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV304P

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 460 mA
Maximum Drain Source Voltage 25 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 1.1 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.65V
Maximum Power Dissipation 350 mW
Transistor Configuration Single
Maximum Gate Source Voltage +8 V
Number of Elements per Chip 1
Width 1.3mm
Minimum Operating Temperature -55 °C
Height 0.93mm
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V
Length 2.92mm
Transistor Material Si
Maximum Operating Temperature +150 °C
96000 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (On a Reel of 3000)
$ 0.063
(exc. GST)
$ 0.069
(inc. GST)
units
Per unit
Per Reel*
3000 +
$0.063
$189.00
*price indicative
Related Products
Infineon OptiMOS™5 Power MOSFETs Infineon offers a large ...
Description:
Infineon OptiMOS™5 Power MOSFETs Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and ...
Infineon SIPMOS® P-Channel MOSFETs The Infineon SIPMOS® small ...
Description:
Infineon SIPMOS® P-Channel MOSFETs The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range The SIPMOS Power transistor can be ...
Power Trench® Dual N-Channel MOSFET, Fairchild Semiconductor ON ...
Description:
Power Trench® Dual N-Channel MOSFET, Fairchild Semiconductor ON Semis Power Trench® MOSFETS are optimised power switched that offer increased system efficiency and power density They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to ...
FEATURESTrenchFET® Gen IV power MOSFETVery low RDS(on) in ...
Description:
FEATURESTrenchFET® Gen IV power MOSFETVery low RDS(on) in a compact and thermally enhanced package Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power lossAPPLICATIONSSynchronous rectification Synchronous buck converter High power density DC/DCOR-ing Load switching