P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180P04P4L02ATMA1

RS Stock No.:: 166-1130
Mfr. Part No.:: IPB180P04P4L02ATMA1
Brand:: Infineon

P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180P04P4L02ATMA1

This image is representative of the product range

11000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 1000)

$3.152

(exc. GST)

$3.467

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$3.152	$3,152.00
5000 +	$2.837	$2,837.00
*price indicative

RS Stock No.:: 166-1130
Mfr. Part No.:: IPB180P04P4L02ATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	40 V
Package Type	D2PAK (TO-263)
Series	OptiMOS P
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	3.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	9.25mm
Length	10mm
Transistor Material	Si
Typical Gate Charge @ Vgs	220 nC @ 10 V
Height	4.4mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C