P-Channel MOSFET, 6 A, 30 V, 7-Pin DFN2020 Infineon IRFHS9301TRPBF

RS Stock No.:: 165-7468
Mfr. Part No.:: IRFHS9301TRPBF
Brand:: Infineon

P-Channel MOSFET, 6 A, 30 V, 7-Pin DFN2020 Infineon IRFHS9301TRPBF

This image is representative of the product range

36000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 4000)

$0.44

(exc. GST)

$0.48

(inc. GST)

Units	Per unit	Per Reel*
4000 - 16000	$0.44	$1,760.00
20000 +	$0.396	$1,584.00
*price indicative

RS Stock No.:: 165-7468
Mfr. Part No.:: IRFHS9301TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: TH

Product Details

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	DFN2020
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	2.1mm
Maximum Operating Temperature	+150 °C
Width	2.1mm
Transistor Material	Si
Typical Gate Charge @ Vgs	13 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	0.95mm