Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235NH6327XTSA1
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
8750 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 3000)
$0.166
(exc. GST)
$0.183
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | $0.166 | $498.00 |
| 15000 + | $0.149 | $447.00 |
*price indicative
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 950 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 |
| Series | OptiMOS™ 2 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.2V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Transistor Material | Si |
| Length | 2mm |
| Typical Gate Charge @ Vgs | 0.32 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Width | 1.25mm |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |
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