N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC Infineon IRF7842TRPBF

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Brand:: Infineon

N-Channel MOSFET, 18 A, 40 V, 8-Pin SOIC Infineon IRF7842TRPBF

This image is representative of the product range

On back order for despatch 12/04/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 4000)

$1.251

(exc. GST)

$1.376

(inc. GST)

Units	Per unit	Per Reel*
4000 - 16000	$1.251	$5,004.00
20000 +	$1.126	$4,504.00

*price indicative

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	40 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.25V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	5mm
Typical Gate Charge @ Vgs	33 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Width	4mm
Number of Elements per Chip	1
Height	1.5mm
Minimum Operating Temperature	-55 °C