SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

RS Stock No.:: 162-9709
Mfr. Part No.:: C2M0160120D
Brand:: Wolfspeed

SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D

This image is representative of the product range

390 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 30)

$16.218

(exc. GST)

$17.84

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$16.218	$486.54
60 - 90	$15.813	$474.39
120 +	$15.57	$467.10
*price indicative

RS Stock No.:: 162-9709
Mfr. Part No.:: C2M0160120D
Brand:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	19 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	196 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	2.4V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	34 nC @ 20 V, 34 nC @ 5 V
Length	16.13mm
Transistor Material	SiC
Width	5.21mm
Number of Elements per Chip	1
Height	21.1mm
Forward Diode Voltage	3.3V
Minimum Operating Temperature	-55 °C