Nexperia 3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP PMCM4401VPEZ
- RS Stock No.:
- 153-0772P
- Mfr. Part No.:
- PMCM4401VPEZ
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 153-0772P
- Mfr. Part No.:
- PMCM4401VPEZ
- Brand:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | -4.9 A | |
| Maximum Drain Source Voltage | -12 V | |
| Package Type | WLCSP | |
| Mounting Type | Surface Mount | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -0.9V | |
| Minimum Gate Threshold Voltage | -0.4V | |
| Maximum Power Dissipation | 12500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Width | 0.75mm | |
| Length | 0.75mm | |
| Number of Elements per Chip | 3 | |
| Typical Gate Charge @ Vgs | 6.8 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.315mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current -4.9 A | ||
Maximum Drain Source Voltage -12 V | ||
Package Type WLCSP | ||
Mounting Type Surface Mount | ||
Pin Count 2 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -0.9V | ||
Minimum Gate Threshold Voltage -0.4V | ||
Maximum Power Dissipation 12500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Width 0.75mm | ||
Length 0.75mm | ||
Number of Elements per Chip 3 | ||
Typical Gate Charge @ Vgs 6.8 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 0.315mm | ||
Minimum Operating Temperature -55 °C | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits