Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 153-0707
Mfr. Part No.:: PMV27UPEAR
Brand:: Nexperia

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

$912.00

(exc. GST)

$1,002.00

(inc. GST)

Stock information currently inaccessible

Units	Per unit	Per Reel*
3000 - 3000	$0.304	$912.00
6000 - 9000	$0.298	$894.00
12000 +	$0.292	$876.00

*price indicative

RS Stock No.:: 153-0707
Mfr. Part No.:: PMV27UPEAR
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-5.6A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	4.15W
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	14.7nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Length	3mm
	Width	1.4 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -5.6A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 4.15W
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 14.7nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Length 3mm
	Width 1.4 mm
	Automotive Standard AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

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