Nexperia Type N-Channel MOSFET, 3.9 A, 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR

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Subtotal (1 pack of 25 units)*

$11.80

(exc. GST)

$12.975

(inc. GST)

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  • Shipping from 13 July 2026
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Units
Per unit
Per Pack*
25 - 725$0.472$11.80
750 - 1475$0.461$11.53
1500 +$0.454$11.35

*price indicative

Packaging Options:
RS Stock No.:
153-0664
Mfr. Part No.:
PMV50ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

69mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.9W

Maximum Operating Temperature

150°C

Width

1.4 mm

Length

3mm

Standards/Approvals

No

Height

1mm

Automotive Standard

AEC-Q101

30V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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