N-Channel MOSFET, 61 A, 60 V, 4-Pin LFPAK33 Nexperia PSMN011-60MSX
- RS Stock No.:
- 152-5575
- Mfr. Part No.:
- PSMN011-60MSX
- Brand:
- Nexperia
On back order for despatch 26/07/2025, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Pack of 25)
$1.086
(exc. GST)
$1.195
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 350 | $1.086 | $27.15 |
| 375 - 725 | $1.06 | $26.50 |
| 750 + | $1.043 | $26.075 |
*price indicative
- RS Stock No.:
- 152-5575
- Mfr. Part No.:
- PSMN011-60MSX
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33, Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
AC-to-DC converters
Synchronous rectification
DC-DC converters
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
AC-to-DC converters
Synchronous rectification
DC-DC converters
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | LFPAK33 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 24.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.6V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 91 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Length | 3.4mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 2.7mm |
| Height | 0.9mm |
| Minimum Operating Temperature | -55 °C |
Related links
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