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    SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11

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    Subtotal (1 unit)**

    $11.37

    (exc. GST)

    $12.51

    (inc. GST)

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    39 In Global stock for delivery within 10 working day(s)*

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    1 - 1$11.37
    2 - 4$11.14
    5 - 9$10.90
    10 - 49$10.66
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    RS Stock No.:
    150-1488
    Mfr. Part No.:
    SCT3120ALGC11
    Brand:
    ROHM
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    Brand

    ROHM

    Channel Type

    N

    Maximum Continuous Drain Current

    21 A

    Maximum Drain Source Voltage

    650 V

    Package Type

    TO-247N

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    158.4 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    5.6V

    Minimum Gate Threshold Voltage

    2.7V

    Maximum Power Dissipation

    103 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    22 V

    Length

    16mm

    Transistor Material

    SiC

    Maximum Operating Temperature

    +175 °C

    Typical Gate Charge @ Vgs

    38 nC @ 18 V

    Width

    5mm

    Number of Elements per Chip

    1

    Height

    21mm

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