IRFB7530PBF N-Channel MOSFET, 195 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 145-9657
  • Mfr. Part No. IRFB7530PBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 195 A
Maximum Drain Source Voltage 60 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.7V
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 375 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 16.51mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Series StrongIRFET
Width 4.83mm
Length 10.67mm
Typical Gate Charge @ Vgs 274 nC @ 10 V
Transistor Material Si
2500 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 50)
$ 3.79
(exc. GST)
$ 4.17
(inc. GST)
units
Per unit
Per Tube*
50 +
$3.79
$189.50
*price indicative
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