N-Channel MOSFET, 110 A, 60 V, 3-Pin TO-220AB Infineon IRFB7540PBF
- RS Stock No.:
- 145-8656
- Mfr. Part No.:
- IRFB7540PBF
- Brand:
- Infineon
700 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$1.513
(exc. GST)
$1.664
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 200 | $1.513 | $75.65 |
| 250 + | $1.362 | $68.10 |
| *price indicative | ||
- RS Stock No.:
- 145-8656
- Mfr. Part No.:
- IRFB7540PBF
- Brand:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220AB |
| Series | StrongIRFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 160 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |
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