Vishay N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 SIR158DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

$6,333.00

(exc. GST)

$6,966.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$2.111$6,333.00
6000 - 6000$1.997$5,991.00
9000 +$1.897$5,691.00

*price indicative

RS Stock No.:
134-9157
Mfr. Part No.:
SIR158DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.25mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.12mm

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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