Toshiba DTMOSIV N-Channel MOSFET, 7.8 A, 650 V, 3-Pin IPAK TK8Q65W,S1Q(S

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Subtotal 25 units (supplied in a tube)*

$51.70

(exc. GST)

$56.875

(inc. GST)

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Units
Per unit
25 - 45$2.068
50 - 120$1.934
125 - 245$1.822
250 +$1.724

*price indicative

Packaging Options:
RS Stock No.:
125-0599P
Mfr. Part No.:
TK8Q65W,S1Q(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

670 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

80 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

16 nC @ 10 V

Length

6.65mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

2.3mm

Height

7.12mm

Forward Diode Voltage

1.7V

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