Toshiba DTMOSIV N-Channel MOSFET, 5.2 A, 650 V, 3-Pin IPAK TK5Q65W,S1Q(S

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Subtotal 50 units (supplied in a tube)*

$42.45

(exc. GST)

$46.70

(inc. GST)

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Units
Per unit
50 - 90$0.849
100 - 240$0.822
250 - 490$0.798
500 +$0.777

*price indicative

Packaging Options:
RS Stock No.:
125-0583P
Mfr. Part No.:
TK5Q65W,S1Q(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK (TO-251)

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.22 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

2.3mm

Length

6.65mm

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

7.12mm

Forward Diode Voltage

1.7V


MOSFET Transistors, Toshiba

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