N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB Infineon IRLB3036PBF

RS Stock No.:: 124-9025
Mfr. Part No.:: IRLB3036PBF
Brand:: Infineon

N-Channel MOSFET, 270 A, 60 V, 3-Pin TO-220AB Infineon IRLB3036PBF

760 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$6.617

(exc. GST)

$7.279

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$6.617	$330.85
100 - 150	$6.452	$322.60
200 +	$6.352	$317.60

*price indicative

RS Stock No.:: 124-9025
Mfr. Part No.:: IRLB3036PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	270 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	380 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	4.83mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	91 nC @ 4.5 V
Transistor Material	Si
Height	9.02mm
Minimum Operating Temperature	-55 °C