N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2050L-7
- RS Stock No.:
- 122-2877
- Mfr. Part No.:
- DMN2050L-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)**
$618.00
(exc. GST)
$681.00
(inc. GST)
3000 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | $0.206 | $618.00 |
| 6000 - 9000 | $0.204 | $612.00 |
| 12000 + | $0.201 | $603.00 |
**price indicative
- RS Stock No.:
- 122-2877
- Mfr. Part No.:
- DMN2050L-7
- Brand:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +40 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.7 nC @ 4.5 V | |
| Length | 3mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +40 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.7 nC @ 4.5 V | ||
Length 3mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
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