Vishay SiR N channel-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiR500DP

N

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$3.84

(exc. GST)

$4.22

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 24 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9$3.84
10 - 24$2.49
25 - 99$1.30
100 - 499$1.28
500 +$1.26

*price indicative

RS Stock No.:
735-151
Mfr. Part No.:
SiR500DP
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00047Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104.1W

Forward Voltage Vf

30V

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16V

Maximum Operating Temperature

150°C

Width

6mm

Standards/Approvals

RoHS

Length

7mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Related links