Vishay E N-Channel Power MOSFET, 32 A, 600 V Enhancement, 8-Pin PowerPAK

RS Stock No.:: 653-084
Mfr. Part No.:: SIHR120N60E-T1-GE3
Brand:: Vishay

Vishay E N-Channel Power MOSFET, 32 A, 600 V Enhancement, 8-Pin PowerPAK

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RS Stock No.:: 653-084
Mfr. Part No.:: SIHR120N60E-T1-GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.12Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Typical Gate Charge Qg @ Vgs	29nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.42mm
	Standards/Approvals	RoHS
	Width	8mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.12Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Typical Gate Charge Qg @ Vgs 29nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.42mm
	Standards/Approvals RoHS
	Width 8mm
	Automotive Standard No

Datasheet - SIHR120N60E-T1-GE3

COO (Country of Origin):: CN

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 32A Maximum Continuous Drain Current - SIHR120N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for surface-mount power conversion and control in industrial systems. It operates as an N-channel enhancement device and is suited to applications requiring robust thermal tolerance and sustained power handling in demanding electrical environments.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 32A continuous current supports substantial load currents • 0.12Ω Rds(on) minimises conduction losses at rated conditions • 278W power dissipation allows significant heat throughput • 29nC typical gate charge speeds switching transitions • 150°C maximum junction temperature endures elevated thermal stress

Applications

• Suitable for high-voltage motor drive power stages • Ideal for switched-mode power supplies in industrial equipment • Used for AC/DC converters requiring high dissipation capacity • Can be used for electronic ballast and lighting control circuits • Suitable for power switching in automation and control panels

What mounting style does it require for board assembly?

It is supplied in a leadless PowerPAK surface-mount package with eight pins, intended for soldered attachment to PCB lands and thermal vias for heat removal.

What gate drive considerations should I allow for?

The gate-source tolerance is ±30V, and the typical gate charge of 29nC requires a driver capable of sourcing and sinking sufficient current for the intended switching frequency.

How does its temperature range affect deployment?

The device is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient and elevated-junction scenarios provided thermal management is implemented.

What electrical limits protect against overvoltage or excessive dissipation?

The maximum drain-source voltage is 600V and the rated power dissipation is 278W

designs should include appropriate clamping and thermal pathways to prevent exceedance.