Infineon CoolSiC MOSFET 650 V G1 N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- RS Stock No.:
- 284-723P
- Mfr. Part No.:
- IMT65R048M1HXUMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
$121.70
(exc. GST)
$133.90
(inc. GST)
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In Stock
- 98 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 99 | $12.17 |
| 100 + | $11.22 |
*price indicative
- RS Stock No.:
- 284-723P
- Mfr. Part No.:
- IMT65R048M1HXUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its Advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an Ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component; it embodies a commitment to performance and reliability, perfect for modern electronic solutions.
Optimised for high frequency applications
Robust thermal performance for harsh environments
Enhanced reliability for extended life
Low switching losses improve efficiency
Compact design reduces system footprint
Industry leading avalanche capability for fault tolerance
User friendly integration with standard drivers