onsemi NTD Type N-Channel MOSFET & Diode, 13 A, 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
$28.37
(exc. GST)
$31.205
(inc. GST)
FREE delivery for orders over $80.00 ex GST
In Stock
- 2,475 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | $5.674 | $28.37 |
| 50 - 95 | $5.396 | $26.98 |
| 100 - 495 | $4.998 | $24.99 |
| 500 - 995 | $4.598 | $22.99 |
| 1000 + | $4.428 | $22.14 |
*price indicative
- RS Stock No.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | NTD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.9nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free, 100% Avalanche Tested | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series NTD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.9nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free, 100% Avalanche Tested | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies.
Halogen Free
RoHS Compliant
Related links
- onsemi NTD Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- onsemi NTD Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 NTD20N03L27T4G
- onsemi NTD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi NTD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 NTD20N06T4G
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252
- onsemi NTD Type N-Channel MOSFET 1200 V, 5-Pin TO-252 NTD5C632NLT4G
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252