Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN3R7-100BSEJ

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Subtotal (1 tape of 1 unit)*

$6.42

(exc. GST)

$7.06

(inc. GST)

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Tape(s)
Per Tape
1 - 9$6.42
10 - 99$5.78
100 +$5.32

*price indicative

Packaging Options:
RS Stock No.:
219-348
Mfr. Part No.:
PSMN3R7-100BSEJ
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

3.95mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

405W

Typical Gate Charge Qg @ Vgs

176nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

25°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

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