STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

This image is representative of the product range

View all MOSFETs

Subtotal (1 reel of 1000 units)*

$67,815.00

(exc. GST)

$74,596.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +$67.815$67,815.00

*price indicative

RS Stock No.:
215-219
Mfr. Part No.:
SCT012H90G3AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.8V

Maximum Power Dissipation Pd

625W

Typical Gate Charge Qg @ Vgs

138nC

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Width

10.4 mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Related links