STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG
- RS Stock No.:
- 151-914P
- Mfr. Part No.:
- STH13N120K5-2AG
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
$215.20
(exc. GST)
$236.70
(inc. GST)
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In Stock
- 980 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 99 | $21.52 |
| 100 - 499 | $19.85 |
| 500 + | $18.41 |
*price indicative
- RS Stock No.:
- 151-914P
- Mfr. Part No.:
- STH13N120K5-2AG
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | MDmesh K5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.69Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Height | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series MDmesh K5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.69Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Height 4.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
AEC Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected