STMicroelectronics STripFET F6 Type P-Channel MOSFET, 35 A, 60 V Enhancement, 3-Pin TO-252 STD35P6LLF6
- RS Stock No.:
- 151-912
- Mfr. Part No.:
- STD35P6LLF6
- Brand:
- STMicroelectronics
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | $3.482 | $17.41 |
| 50 - 95 | $3.31 | $16.55 |
| 100 - 495 | $3.068 | $15.34 |
| 500 - 995 | $2.816 | $14.08 |
| 1000 + | $2.718 | $13.59 |
*price indicative
- RS Stock No.:
- 151-912
- Mfr. Part No.:
- STD35P6LLF6
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET F6 | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET F6 | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics P-channel Power MOSFET, developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
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