STMicroelectronics, Type N-Channel IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

$239.40

(exc. GST)

$263.40

(inc. GST)

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In Stock
  • Plus 390 unit(s) shipping from 19 February 2026
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Units
Per unit
Per Tube*
30 - 120$7.98$239.40
150 +$7.182$215.46

*price indicative

RS Stock No.:
920-6320
Mfr. Part No.:
STGW80V60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

120A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

Trench Gate Field Stop

Length

15.75mm

Height

20.15mm

Width

5.15 mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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