Infineon FS75R12KT4B15BOSA1, Type N-Channel 3 Phase Bridge IGBT Module, 75 A 1200 V, 28-Pin ECONO2, PCB
- RS Stock No.:
- 838-6860
- Mfr. Part No.:
- FS75R12KT4B15BOSA1
- Brand:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 838-6860
- Mfr. Part No.:
- FS75R12KT4B15BOSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Configuration | 3 Phase Bridge | |
| Package Type | ECONO2 | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 28 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 107.5mm | |
| Width | 45mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Configuration 3 Phase Bridge | ||
Package Type ECONO2 | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 28 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 107.5mm | ||
Width 45mm | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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