Toshiba GT50JR21, Type N, Type N-Channel IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Through Hole
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole, Through Hole | |
| Channel Type | Type N, Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-3P | ||
Mount Type Through Hole, Through Hole | ||
Channel Type Type N, Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Toshiba GT50JR21 IGBT 3-Pin TO-3P, Through Hole
- Toshiba 50 A 600 V Through Hole
- Toshiba GT50JR22 50 A 600 V Through Hole
- Toshiba GT50J342 80 A 600 V Through Hole
- Toshiba 30 A 600 V Through Hole
- Toshiba GT30J121 30 A 600 V Through Hole
- onsemi FGA50N100BNTDTU IGBT 3-Pin TO-3P, Through Hole
- STMicroelectronics 60 A 600 V Through Hole