Toshiba GT30J324(Q) IGBT, 30 A 600 V, 3-Pin TO-3PN, Through Hole

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Subtotal 20 units (supplied in a bag)*

$242.40

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$266.60

(inc. GST)

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20 - 49$12.12
50 - 99$12.00
100 +$11.69

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Packaging Options:
RS Stock No.:
601-2813P
Mfr. Part No.:
GT30J324(Q)
Brand:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 4.8 x 19mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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