Infineon IKW50N120CS7XKSA1, N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 232-6732
- Mfr. Part No.:
- IKW50N120CS7XKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 232-6732
- Mfr. Part No.:
- IKW50N120CS7XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 428W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | IKW50N120CS7 | |
| Width | 16.3mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 428W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series IKW50N120CS7 | ||
Width 16.3mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Length 21.5mm | ||
Automotive Standard No | ||
Infineon IKW50N120CS7 Series IGBT, 1200V Maximum Collector Emitter Voltage, 50A Max Continuous Collector Current - IKW50N120CS7XKSA1
This IGBT is a through-hole, TO-247 packaged power switching device designed for high-voltage power electronics. It functions as an N-channel transistor suitable for systems requiring high collector-emitter voltage handling and substantial continuous current capacity, operating across a wide ambient temperature range for industrial use.
Features and Benefits:
• 1200 V collector-emitter rating enables high-voltage switching
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance
• 50 A continuous current supports heavy-load applications
• 2 V maximum Vce(sat) reduces conduction losses under load
• 428 W power dissipation allows sustained thermal loading
• ±20 V gate-emitter limit permits robust gate-drive swings
• JEDEC47/20/22 approval ensures standardised testing compliance
Applications
• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups
• Ideal for high-voltage DC-DC conversion modules
• Used with power supplies for heavy industrial equipment
• Can be used for switched-mode power conversion systems
• Suitable for laboratory high-voltage test setups
What package style and mounting method does it use?
It is supplied in a TO-247 package and designed for through-hole mounting.
What temperature range can it tolerate during operation?
It is rated to operate from −55 °C up to a maximum of 175 °C.
How many transistor elements are contained in the device?
The device comprises a single transistor element.
What are the physical height, width and length of the package?
The package measures 5.3 mm in height, 16.3 mm in width and 21.5 mm in length.
Is this component intended for automotive-standard applications?
No, it is not specified for automotive-standard use.
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