Infineon, Type N-Channel IGBT, 75 A 1200 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 218-4402
- Mfr. Part No.:
- IKY75N120CS6XKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 218-4402
- Mfr. Part No.:
- IKY75N120CS6XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Switching Speed | 300ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 41.2mm | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Switching Speed 300ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 41.2mm | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon high speed hard-switching TRENCHSTOP IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO-247 package is designed to reach the best compromise between switching and conduction losses. It is used in industrial heating and welding and UPS system.
Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
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