Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

$19.60

(exc. GST)

$21.56

(inc. GST)

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  • 50 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8$9.80$19.60
10 - 98$9.62$19.24
100 - 248$9.445$18.89
250 - 498$9.27$18.54
500 +$9.105$18.21

*price indicative

Packaging Options:
RS Stock No.:
215-6675
Mfr. Part No.:
IKW75N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

90A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Length

41.42mm

Standards/Approvals

JEDEC

Width

16.13 mm

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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