STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263)

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 65 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 9.35mm
Height 4.6mm
Dimensions 10.4 x 9.35 x 4.6mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
1000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 1000)
$ 1.257
(exc. GST)
$ 1.383
(inc. GST)
units
Per unit
Per Reel*
1000 +
$1.257
$1,257.00
*price indicative
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