IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

RS Stock No.:: 168-4761
Mfr. Part No.:: IXDN55N120D1
Brand:: IXYS

IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount

This image is representative of the product range

On back order for despatch 10/01/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 10)

$54.436

(exc. GST)

$59.88

(inc. GST)

Units	Per unit	Per Tube*
10 - 40	$54.436	$544.36
50 +	$48.993	$489.93
*price indicative

RS Stock No.:: 168-4761
Mfr. Part No.:: IXDN55N120D1
Brand:: IXYS

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: US

Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	100 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	450 W
Package Type	SOT-227B
Mounting Type	Surface Mount
Channel Type	N
Pin Count	4
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	38.2 x 25.07 x 9.6mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-40 °C