Infineon IGQ75N120S7XKSA1, N-Channel IGBT 1.2 kV, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

RS Stock No.:: 284-981P
Mfr. Part No.:: IGQ75N120S7XKSA1
Brand:: Infineon

Infineon IGQ75N120S7XKSA1, N-Channel IGBT 1.2 kV, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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RS Stock No.:: 284-981P
Mfr. Part No.:: IGQ75N120S7XKSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	630W
	Package Type	PG-TO-247-3-PLUS-N
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	15.9mm
	Standards/Approvals	IEC 60749, IEC 60068, IEC 60747
	Height	5.1mm
	Length	20.1mm
	Automotive Standard	No
	Channel Type	N
	Product Type	IGBT
	Maximum Collector Emitter Voltage (Vceo)	1.2 kV
	Pin Count	3
	Package Type	PG-TO-247-3-PLUS-N
	Mount Type	Through Hole
	Automotive Standard	No
	Height	5.1 mm
	Length	20.1 mm
	Maximum Gate Emitter Voltage (VGEO)	±20 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	630 W
	Minimum Operating Temperature	-40 °C
	Standards/Approvals	IEC 60749, IEC 60068, IEC 60747
	Width	15.9 mm

	Select all
	Brand Infineon
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 630W
	Package Type PG-TO-247-3-PLUS-N
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 15.9mm
	Standards/Approvals IEC 60749, IEC 60068, IEC 60747
	Height 5.1mm
	Length 20.1mm
	Automotive Standard No
	Channel Type N
	Product Type IGBT
	Maximum Collector Emitter Voltage (Vceo) 1.2 kV
	Pin Count 3
	Package Type PG-TO-247-3-PLUS-N
	Mount Type Through Hole
	Automotive Standard No
	Height 5.1 mm
	Length 20.1 mm
	Maximum Gate Emitter Voltage (VGEO) ±20 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 630 W
	Minimum Operating Temperature -40 °C
	Standards/Approvals IEC 60749, IEC 60068, IEC 60747
	Width 15.9 mm

Datasheet - IGQ75N120S7XKSA1

The Infineon IGBT is designed to operate efficiently at 1200 V while ensuring robust performance in demanding applications. Featuring cutting edge trench technology, this device excels in handling high current levels of up to 75 A, making it Ideal for industrial power supplies and renewable energy systems such as solar inverters. The meticulous design ensures low saturation voltage and significant dv/dt controllability, enhancing the reliability and efficiency of power conversion systems. With a strong emphasis on durability, this IGBT is validated for industrial applications according to stringent JEDEC standards, ensuring it meets the rigorous demands of modern electronics.

Designed with trench technology for efficiency

Short circuit ruggedness ensures reliable performance

Wide temperature range for diverse applications

Reduced switching losses enhance thermal management

Optimized for high performance industrial use

Comprehensive PSpice models for easy integration

Low gate charge enables Faster switching speeds

Infineon IGQ75N120S7XKSA1, N-Channel IGBT 1.2 kV, 3-Pin PG-TO-247-3-PLUS-N, Through Hole

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