Infineon IGQ120N120S7XKSA1, N-Channel IGBT, 216 A 1.2 kV, 3-Pin PG-TO-247-3-PLUS-N, Through Hole
- RS Stock No.:
- 284-976
- Mfr. Part No.:
- IGQ120N120S7XKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 284-976
- Mfr. Part No.:
- IGQ120N120S7XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 216 A | |
| Maximum Collector Emitter Voltage (Vceo) | 1.2 kV | |
| Pin Count | 3 | |
| Package Type | PG-TO-247-3-PLUS-N | |
| Mount Type | Through Hole | |
| Automotive Standard | No | |
| Height | 5.1 mm | |
| Length | 20.1 mm | |
| Maximum Gate Emitter Voltage (VGEO) | ±20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 1 kW | |
| Minimum Operating Temperature | -40 °C | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Width | 15.9 mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 216 A | ||
Maximum Collector Emitter Voltage (Vceo) 1.2 kV | ||
Pin Count 3 | ||
Package Type PG-TO-247-3-PLUS-N | ||
Mount Type Through Hole | ||
Automotive Standard No | ||
Height 5.1 mm | ||
Length 20.1 mm | ||
Maximum Gate Emitter Voltage (VGEO) ±20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 1 kW | ||
Minimum Operating Temperature -40 °C | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Width 15.9 mm | ||
The Infineon IGBT is a cutting edge power semiconductor designed for high performance applications. With its Advanced trench technology, this IGBT delivers exceptional ruggedness and reliability. Capable of withstanding short circuits for up to 8 microseconds, it is engineered for demanding environments such as industrial power supplies and renewable energy systems. The device operates at a collector emitter voltage of up to 1200 V and supports continuous collector currents of 120 A. Enhanced thermal performance is achieved through low thermal resistance, making it a favourite among engineers seeking efficiency and performance in their designs.
Optimized for high thermal dissipation
Handles brief short circuits reliably
Wide dv/dt controllability for flexibility
Conforms to industrial standards for robustness
Delivers low saturation voltage for efficiency
Offers a spectrum of models for applications
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