Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Transistor Type	NPN
	Maximum DC Collector Current	3 A
	Maximum Collector Emitter Voltage	100 V
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Maximum Power Dissipation	15 W
	Minimum DC Current Gain	10
	Transistor Configuration	Single
	Maximum Collector Base Voltage	100 V dc
	Maximum Emitter Base Voltage	5 V
	Maximum Operating Frequency	1 MHz
	Pin Count	3
	Number of Elements per Chip	1
	Minimum Operating Temperature	-65 °C
	Maximum Operating Temperature	+150 °C
	Dimensions	6.73 x 2.38 x 6.22mm

	Select all
	Brand onsemi
	Transistor Type NPN
	Maximum DC Collector Current 3 A
	Maximum Collector Emitter Voltage 100 V
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Maximum Power Dissipation 15 W
	Minimum DC Current Gain 10
	Transistor Configuration Single
	Maximum Collector Base Voltage 100 V dc
	Maximum Emitter Base Voltage 5 V
	Maximum Operating Frequency 1 MHz
	Pin Count 3
	Number of Elements per Chip 1
	Minimum Operating Temperature -65 °C
	Maximum Operating Temperature +150 °C
	Dimensions 6.73 x 2.38 x 6.22mm

The ON Semiconductor MJD31 is the complementary power transistors. This transistor designed for general purpose amplifier and low speed switching applications. The package type of transistor is IPAK.

Lead formed for surface mount applications in plastic sleeves
These devices are Pb free and are RoHS compliant

onsemi MJD31C1G NPN Transistor, 3 A, 100 V, 3-Pin IPAK

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